MMFTN210A Diotec Semiconductor
Виробник: Diotec Semiconductor
Description: MOSFET SOT23 N 100V 0.32OHM 150C
Input Capacitance (Ciss) (Max) @ Vds: 362 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Power Dissipation (Max): 1.56W (Ta)
Rds On (Max) @ Id, Vgs: 320mOhm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
| Кількість | Ціна |
|---|---|
| 27+ | 11.73 грн |
| 38+ | 7.99 грн |
| 100+ | 5.37 грн |
| 500+ | 3.84 грн |
| 1000+ | 3.43 грн |
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Технічний опис MMFTN210A Diotec Semiconductor
Description: MOSFET SOT23 N 100V 0.32OHM 150C, Input Capacitance (Ciss) (Max) @ Vds: 362 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: SOT-23-3 (TO-236), Vgs(th) (Max) @ Id: 1.6V @ 250µA, Power Dissipation (Max): 1.56W (Ta), Rds On (Max) @ Id, Vgs: 320mOhm @ 1A, 10V, Current - Continuous Drain (Id) @ 25°C: 2A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Інші пропозиції MMFTN210A за ціною від 13.39 грн до 16.23 грн
| Фото | Назва | Виробник | Інформація |
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MMFTN210A | Виробник : DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 2A; Idm: 7.2A; 1.56W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 2A Pulsed drain current: 7.2A Power dissipation: 1.56W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.45Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 3.5nC |
на замовлення 31 шт: термін постачання 14-30 дні (днів) |
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MMFTN210A | Виробник : Diotec Semiconductor |
Description: MOSFET SOT23 N 100V 0.32OHM 150C Input Capacitance (Ciss) (Max) @ Vds: 362 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: SOT-23-3 (TO-236) Vgs(th) (Max) @ Id: 1.6V @ 250µA Power Dissipation (Max): 1.56W (Ta) Rds On (Max) @ Id, Vgs: 320mOhm @ 1A, 10V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
товару немає в наявності |