MMFTN3422ASK Diotec Semiconductor
Виробник: Diotec Semiconductor
Description: MOSFET SOT-23 N 30V 4.2A
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 4.2A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 505 pF @ 15 V
Відгуки про товар
Написати відгук
Технічний опис MMFTN3422ASK Diotec Semiconductor
Description: MOSFET SOT-23 N 30V 4.2A, Packaging: Bulk, Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta), Rds On (Max) @ Id, Vgs: 42mOhm @ 4.2A, 10V, Power Dissipation (Max): 1.25W (Ta), Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 505 pF @ 15 V.
Інші пропозиції MMFTN3422ASK
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
MMFTN3422ASK | DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4.2A; Idm: 20A; 1.25W; SOT23 Case: SOT23 Mounting: SMD Kind of package: reel; tape Pulsed drain current: 20A Power dissipation: 1.25W Gate charge: 11.5nC Polarisation: unipolar Version: ESD Drain current: 4.2A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±12V On-state resistance: 55mΩ |
товару немає в наявності |
В кошику од. на суму грн. |
| MMFTN3422ASK |
|
Виробник: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.2A; Idm: 20A; 1.25W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 20A
Power dissipation: 1.25W
Gate charge: 11.5nC
Polarisation: unipolar
Version: ESD
Drain current: 4.2A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
On-state resistance: 55mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.2A; Idm: 20A; 1.25W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 20A
Power dissipation: 1.25W
Gate charge: 11.5nC
Polarisation: unipolar
Version: ESD
Drain current: 4.2A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
On-state resistance: 55mΩ
товару немає в наявності
В кошику
од. на суму грн.