MMFTN4520 Diotec Semiconductor
Виробник: Diotec SemiconductorDescription: MOSFET, SOT-23, 150V, 0.425A, 15
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1A, 10V
Power Dissipation (Max): 960mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 164 pF @ 75 V
на замовлення 2544 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 11+ | 29.37 грн |
| 18+ | 17.35 грн |
| 100+ | 10.95 грн |
| 500+ | 7.66 грн |
| 1000+ | 6.82 грн |
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Технічний опис MMFTN4520 Diotec Semiconductor
Description: MOSFET, SOT-23, 150V, 0.425A, 15, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1A (Ta), Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1A, 10V, Power Dissipation (Max): 960mW (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 164 pF @ 75 V.
Інші пропозиції MMFTN4520
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| MMFTN4520 | Виробник : DIOTEC SEMICONDUCTOR |
MMFTN4520-DIO SMD N channel transistors |
товару немає в наявності |
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MMFTN4520 | Виробник : Diotec Semiconductor |
Description: MOSFET, SOT-23, 150V, 0.425A, 15 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1A, 10V Power Dissipation (Max): 960mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 164 pF @ 75 V |
товару немає в наявності |