MMFTN6001 Diotec Semiconductor
Виробник: Diotec Semiconductor
Description: MOSFET SOT23 N 60V 2OHM 150C
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 440mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
Power Dissipation (Max): 530mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 23.3 pF @ 25 V
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 1.55 грн |
| 6000+ | 1.24 грн |
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Технічний опис MMFTN6001 Diotec Semiconductor
Description: MOSFET SOT23 N 60V 2OHM 150C, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 440mA (Ta), Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V, Power Dissipation (Max): 530mW (Ta), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Input Capacitance (Ciss) (Max) @ Vds: 23.3 pF @ 25 V.
Інші пропозиції MMFTN6001 за ціною від 1.25 грн до 9.84 грн
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MMFTN6001 | Diotec Semiconductor |
Description: MOSFET SOT23 N 60V 2OHM 150C Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 440mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V Power Dissipation (Max): 530mW (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 23.3 pF @ 25 V |
на замовлення 6845 шт: термін постачання 21-31 дні (днів) |
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MMFTN6001 | DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 440mA; Idm: 1A; 530mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.44A Pulsed drain current: 1A Power dissipation: 0.53W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 2.6Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 102133 шт: термін постачання 14-30 дні (днів) |
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| MMFTN6001 |
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Виробник: Diotec Semiconductor
Description: MOSFET SOT23 N 60V 2OHM 150C
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 440mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
Power Dissipation (Max): 530mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 23.3 pF @ 25 V
Description: MOSFET SOT23 N 60V 2OHM 150C
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 440mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
Power Dissipation (Max): 530mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 23.3 pF @ 25 V
на замовлення 6845 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 37+ | 8.54 грн |
| 52+ | 5.76 грн |
| 100+ | 3.62 грн |
| 500+ | 2.46 грн |
| 1000+ | 2.29 грн |
| MMFTN6001 |
|
Виробник: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 440mA; Idm: 1A; 530mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.44A
Pulsed drain current: 1A
Power dissipation: 0.53W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 440mA; Idm: 1A; 530mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.44A
Pulsed drain current: 1A
Power dissipation: 0.53W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 102133 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 46+ | 9.84 грн |
| 65+ | 6.40 грн |
| 109+ | 3.81 грн |
| 500+ | 2.59 грн |
| 1000+ | 2.21 грн |
| 3000+ | 1.74 грн |
| 6000+ | 1.50 грн |
| 9000+ | 1.39 грн |
| 15000+ | 1.25 грн |