Технічний опис MMFTN6190KDW Diotec Semiconductor
Description: IC, Packaging: Bulk, Package / Case: 6-VSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: 2 N-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 320mW (Ta), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 1A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 87pF @ 20V, Rds On (Max) @ Id, Vgs: 280mOhm @ 1.3A, 10V, Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V, Vgs(th) (Max) @ Id: 2.8V @ 250µA, Supplier Device Package: SOT-363.
Інші пропозиції MMFTN6190KDW
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MMFTN6190KDW | Виробник : DIOTEC SEMICONDUCTOR |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 1A; Idm: 9.6A; 0.4W; SOT363 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 1A Pulsed drain current: 9.6A Power dissipation: 0.4W Case: SOT363 Gate-source voltage: ±20V On-state resistance: 0.45Ω Mounting: SMD Gate charge: 2nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 5 шт |
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MMFTN6190KDW | Виробник : Diotec Semiconductor |
Description: IC Packaging: Bulk Package / Case: 6-VSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 320mW (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 87pF @ 20V Rds On (Max) @ Id, Vgs: 280mOhm @ 1.3A, 10V Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V Vgs(th) (Max) @ Id: 2.8V @ 250µA Supplier Device Package: SOT-363 |
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MMFTN6190KDW | Виробник : Diotec Semiconductor |
MOSFET MOSFET, SOT-363, 30V, 1A, 150C, N |
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MMFTN6190KDW | Виробник : DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 1A; Idm: 9.6A; 0.4W; SOT363 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 1A Pulsed drain current: 9.6A Power dissipation: 0.4W Case: SOT363 Gate-source voltage: ±20V On-state resistance: 0.45Ω Mounting: SMD Gate charge: 2nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |