MMFTP2307A Diotec Semiconductor
Виробник: Diotec SemiconductorDescription: MMFTP2307A
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 29mOhm @ 6A, 4.5V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 28.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1242 pF @ 10 V
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Технічний опис MMFTP2307A Diotec Semiconductor
Description: MMFTP2307A, Packaging: Bulk, Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), Rds On (Max) @ Id, Vgs: 29mOhm @ 6A, 4.5V, Power Dissipation (Max): 1.6W (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 28.5 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1242 pF @ 10 V.
Інші пропозиції MMFTP2307A
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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MMFTP2307A | Виробник : Diotec Semiconductor |
MOSFETs SOT-23, P, -20V, -6A, 29m?, 150C |
товару немає в наявності |
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| MMFTP2307A | Виробник : DIOTEC SEMICONDUCTOR |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -6A; Idm: -24A; 1.6W; SOT23 Mounting: SMD Kind of package: reel; tape Case: SOT23 Polarisation: unipolar Pulsed drain current: -24A Drain-source voltage: -20V Gate charge: 28.5nC On-state resistance: 60mΩ Power dissipation: 1.6W Gate-source voltage: ±12V Drain current: -6A Kind of channel: enhancement Type of transistor: P-MOSFET |
товару немає в наявності |