Технічний опис MMFTP3160 DIOTEC SEMICONDUCTOR
Description: MOSFET SOT-23 P -30V -2A, Packaging: Bulk, Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.6A, Rds On (Max) @ Id, Vgs: 90mOhm @ 2.6A, 10V, Power Dissipation (Max): 1.4W, Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 10 V.
Інші пропозиції MMFTP3160
| Фото | Назва | Виробник | Інформація |
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MMFTP3160 | Виробник : Diotec Semiconductor |
 Description: MOSFET SOT-23 P -30V -2APackaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A Rds On (Max) @ Id, Vgs: 90mOhm @ 2.6A, 10V Power Dissipation (Max): 1.4W Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 10 V |
товару немає в наявності |