MMFTP3160 Diotec Semiconductor

Description: MOSFET SOT-23 P -30V -2A, Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: SOT-23-3 (TO-236), Vgs(th) (Max) @ Id: 2V @ 250µA, Power Dissipation (Max): 1.4W, Rds On (Max) @ Id, Vgs: 90mOhm @ 2.6A, 10V, Current - Continuous Drain (Id) @ 25°C: 2.6A, FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Bulk.