MMFTP5618-AQ Diotec Semiconductor
Виробник: Diotec Semiconductor
Description: MOSFET SOT-23 P -60V -1.25A
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.25A (Ta)
Rds On (Max) @ Id, Vgs: 170mOhm @ 1.25A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 361 pF @ 30 V
Qualification: AEC-Q101
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Технічний опис MMFTP5618-AQ Diotec Semiconductor
Description: MOSFET SOT-23 P -60V -1.25A, Packaging: Bulk, Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 1.25A (Ta), Rds On (Max) @ Id, Vgs: 170mOhm @ 1.25A, 10V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 3V @ 1mA, Supplier Device Package: SOT-23-3 (TO-236), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 361 pF @ 30 V, Qualification: AEC-Q101.
Інші пропозиції MMFTP5618-AQ
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
MMFTP5618-AQ | Виробник : Diotec Semiconductor |
MOSFETs MOSFET, SOT-23, -60V, -1.25A, 150C, P, AEC-Q101 |
товару немає в наявності |