MMIX1F44N100Q3 IXYS
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Q3-Class; unipolar; 1kV; 30A; Idm: 110A; 694W
Type of transistor: N-MOSFET
Technology: HiPerFET™; Q3-Class
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 30A
Pulsed drain current: 110A
Power dissipation: 694W
Case: SMPD
Gate-source voltage: ±30V
On-state resistance: 245mΩ
Mounting: SMD
Gate charge: 264nC
Kind of channel: enhancement
Reverse recovery time: 300ns
| Кількість | Ціна |
|---|---|
| 1+ | 4164.32 грн |
| 3+ | 3413.13 грн |
| 10+ | 3067.76 грн |
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Технічний опис MMIX1F44N100Q3 IXYS
Description: MOSFET N-CH 1000V 30A 24SMPD, Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 264 nC @ 10 V, Drain to Source Voltage (Vdss): 1000 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: 24-SMPD, Vgs(th) (Max) @ Id: 6.5V @ 8mA, Power Dissipation (Max): 694W (Tc), Rds On (Max) @ Id, Vgs: 245mOhm @ 22A, 10V, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 24-PowerSMD, 21 Leads, Packaging: Tube.
Інші пропозиції MMIX1F44N100Q3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
MMIX1F44N100Q3 | IXYS |
Description: MOSFET N-CH 1000V 30A 24SMPD Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 264 nC @ 10 V Drain to Source Voltage (Vdss): 1000 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: 24-SMPD Vgs(th) (Max) @ Id: 6.5V @ 8mA Power Dissipation (Max): 694W (Tc) Rds On (Max) @ Id, Vgs: 245mOhm @ 22A, 10V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 24-PowerSMD, 21 Leads Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. |
 |
MMIX1F44N100Q3 | IXYS |
MOSFETs HiperFET Pwr MOSFET Q3-Class |
товару немає в наявності |
В кошику од. на суму грн. |
| MMIX1F44N100Q3 |
|
Виробник: IXYS
Description: MOSFET N-CH 1000V 30A 24SMPD
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 264 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 24-SMPD
Vgs(th) (Max) @ Id: 6.5V @ 8mA
Power Dissipation (Max): 694W (Tc)
Rds On (Max) @ Id, Vgs: 245mOhm @ 22A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 24-PowerSMD, 21 Leads
Packaging: Tube
Description: MOSFET N-CH 1000V 30A 24SMPD
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 264 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 24-SMPD
Vgs(th) (Max) @ Id: 6.5V @ 8mA
Power Dissipation (Max): 694W (Tc)
Rds On (Max) @ Id, Vgs: 245mOhm @ 22A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 24-PowerSMD, 21 Leads
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| MMIX1F44N100Q3 |
|
Виробник: IXYS
MOSFETs HiperFET Pwr MOSFET Q3-Class
MOSFETs HiperFET Pwr MOSFET Q3-Class
товару немає в наявності
В кошику
од. на суму грн.