на замовлення 300 шт:
термін постачання 350-359 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1690.59 грн |
| 10+ | 1480.34 грн |
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Технічний опис MMIX1F520N075T2 IXYS
Description: MOSFET N-CH 75V 500A 24SMPD, Packaging: Tube, Package / Case: 24-PowerSMD, 21 Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 500A (Tc), Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V, Power Dissipation (Max): 830W (Tc), Vgs(th) (Max) @ Id: 5V @ 8mA, Supplier Device Package: 24-SMPD, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 75 V, Gate Charge (Qg) (Max) @ Vgs: 545 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 41000 pF @ 25 V.
Інші пропозиції MMIX1F520N075T2
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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MMIX1F520N075T2 | Виробник : Littelfuse |
 Trans MOSFET N-CH Si 75V 500A 21-Pin SMPD-X |
товар відсутній |
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 +1 |
MMIX1F520N075T2 | Виробник : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 75V; 500A; 830W; SMPD Kind of package: tube Power dissipation: 830W Gate charge: 545nC Polarisation: unipolar Technology: GigaMOS™; HiPerFET™; TrenchT2™ Drain current: 500A Kind of channel: enhanced Drain-source voltage: 75V Type of transistor: N-MOSFET Gate-source voltage: ±20V Case: SMPD On-state resistance: 1.6mΩ Reverse recovery time: 150ns Mounting: SMD кількість в упаковці: 1 шт |
товар відсутній |
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MMIX1F520N075T2 | Виробник : Littelfuse |
Trans MOSFET N-CH Si 75V 500A 21-Pin SMPD-X |
товар відсутній |
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MMIX1F520N075T2 | Виробник : Littelfuse |
Trans MOSFET N-CH Si 75V 500A 21-Pin SMPD-X |
товар відсутній |
|
 |
MMIX1F520N075T2 | Виробник : IXYS |
Description: MOSFET N-CH 75V 500A 24SMPD Packaging: Tube Package / Case: 24-PowerSMD, 21 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 500A (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V Power Dissipation (Max): 830W (Tc) Vgs(th) (Max) @ Id: 5V @ 8mA Supplier Device Package: 24-SMPD Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 545 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 41000 pF @ 25 V |
товар відсутній |
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|
+1 |
MMIX1F520N075T2 | Виробник : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 75V; 500A; 830W; SMPD Kind of package: tube Power dissipation: 830W Gate charge: 545nC Polarisation: unipolar Technology: GigaMOS™; HiPerFET™; TrenchT2™ Drain current: 500A Kind of channel: enhanced Drain-source voltage: 75V Type of transistor: N-MOSFET Gate-source voltage: ±20V Case: SMPD On-state resistance: 1.6mΩ Reverse recovery time: 150ns Mounting: SMD |
товар відсутній |