MMIX1G320N60B3 IXYS
Виробник: IXYSCategory: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 600V; 180A; 1kW; SMPD
Type of transistor: IGBT
Technology: BiMOSFET™; GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 180A
Power dissipation: 1kW
Case: SMPD
Gate-emitter voltage: ±20V
Pulsed collector current: 1kA
Mounting: SMD
Gate charge: 585nC
Kind of package: tube
Turn-on time: 107ns
Turn-off time: 595ns
кількість в упаковці: 1 шт
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Технічний опис MMIX1G320N60B3 IXYS
Description: IGBT PT 600V 400A 24-SMPD, Packaging: Tube, Package / Case: 24-PowerSMD, 21 Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 66 ns, Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 100A, Supplier Device Package: 24-SMPD, IGBT Type: PT, Td (on/off) @ 25°C: 44ns/250ns, Switching Energy: 2.7mJ (on), 5mJ (off), Test Condition: 480V, 100A, 1Ohm, 15V, Gate Charge: 585 nC, Current - Collector (Ic) (Max): 400 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 1000 A, Power - Max: 1000 W.
Інші пропозиції MMIX1G320N60B3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| MMIX1G320N60B3 | Виробник : IXYS |
Description: IGBT PT 600V 400A 24-SMPD Packaging: Tube Package / Case: 24-PowerSMD, 21 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 66 ns Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 100A Supplier Device Package: 24-SMPD IGBT Type: PT Td (on/off) @ 25°C: 44ns/250ns Switching Energy: 2.7mJ (on), 5mJ (off) Test Condition: 480V, 100A, 1Ohm, 15V Gate Charge: 585 nC Current - Collector (Ic) (Max): 400 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 1000 A Power - Max: 1000 W |
товар відсутній |
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| MMIX1G320N60B3 | Виробник : IXYS |
IGBT Transistors IGBT SMPD PKG-STANDARD |
товар відсутній |
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| MMIX1G320N60B3 | Виробник : IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; BiMOSFET™; 600V; 180A; 1kW; SMPD Type of transistor: IGBT Technology: BiMOSFET™; GenX3™; PT Collector-emitter voltage: 600V Collector current: 180A Power dissipation: 1kW Case: SMPD Gate-emitter voltage: ±20V Pulsed collector current: 1kA Mounting: SMD Gate charge: 585nC Kind of package: tube Turn-on time: 107ns Turn-off time: 595ns |
товар відсутній |