MMIX1T550N055T2 IXYS
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 55V; 550A; Idm: 2kA; 830W
Type of transistor: N-MOSFET
Technology: GigaMOS™; TrenchT2™
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 550A
Pulsed drain current: 2kA
Power dissipation: 830W
Case: SMPD
Gate-source voltage: ±20V
On-state resistance: 1.3mΩ
Mounting: SMD
Gate charge: 595nC
Kind of channel: enhanced
Reverse recovery time: 100ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 55V; 550A; Idm: 2kA; 830W
Type of transistor: N-MOSFET
Technology: GigaMOS™; TrenchT2™
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 550A
Pulsed drain current: 2kA
Power dissipation: 830W
Case: SMPD
Gate-source voltage: ±20V
On-state resistance: 1.3mΩ
Mounting: SMD
Gate charge: 595nC
Kind of channel: enhanced
Reverse recovery time: 100ns
на замовлення 20 шт:
термін постачання 21-30 дні (днів)
Кількість | Ціна без ПДВ |
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1+ | 2629.67 грн |
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Технічний опис MMIX1T550N055T2 IXYS
Description: MOSFET N-CH 55V 550A 24SMPD, Packaging: Tube, Package / Case: 24-PowerSMD, 21 Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 550A (Tc), Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V, Power Dissipation (Max): 830W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 250µA, Supplier Device Package: 24-SMPD, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 595 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 40000 pF @ 25 V.
Інші пропозиції MMIX1T550N055T2 за ціною від 3155.61 грн до 3236.34 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||
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MMIX1T550N055T2 | Виробник : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 55V; 550A; Idm: 2kA; 830W Type of transistor: N-MOSFET Technology: GigaMOS™; TrenchT2™ Polarisation: unipolar Drain-source voltage: 55V Drain current: 550A Pulsed drain current: 2kA Power dissipation: 830W Case: SMPD Gate-source voltage: ±20V On-state resistance: 1.3mΩ Mounting: SMD Gate charge: 595nC Kind of channel: enhanced Reverse recovery time: 100ns кількість в упаковці: 1 шт |
на замовлення 20 шт: термін постачання 7-14 дні (днів) |
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MMIX1T550N055T2 | Виробник : IXYS |
Description: MOSFET N-CH 55V 550A 24SMPD Packaging: Tube Package / Case: 24-PowerSMD, 21 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 550A (Tc) Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V Power Dissipation (Max): 830W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: 24-SMPD Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 595 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 40000 pF @ 25 V |
на замовлення 9 шт: термін постачання 21-31 дні (днів) |
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MMIX1T550N055T2 | Виробник : Littelfuse | Trans MOSFET N-CH 55V 550A 21-Pin SMPD-X |
товар відсутній |
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MMIX1T550N055T2 | Виробник : IXYS | MOSFET SMPD MOSFETs Power Device |
товар відсутній |