MMIX1T550N055T2 IXYS

Description: MOSFET N-CH 55V 550A 24SMPD, Input Capacitance (Ciss) (Max) @ Vds: 40000 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 595 nC @ 10 V, Drain to Source Voltage (Vdss): 55 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: 24-SMPD, Vgs(th) (Max) @ Id: 3.8V @ 250µA, Power Dissipation (Max): 830W (Tc), Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V, Current - Continuous Drain (Id) @ 25°C: 550A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 24-PowerSMD, 21 Leads, Packaging: Tube.