на замовлення 23 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 3912.17 грн |
| 10+ | 3596.75 грн |
| 20+ | 2996.26 грн |
| 100+ | 2715.43 грн |
| 500+ | 2562.32 грн |
| 1000+ | 2473.78 грн |
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Технічний опис MMIX1Y100N120C3H1 IXYS
Description: IGBT 1200V 92A 24-SMPD, Packaging: Tube, Package / Case: 24-PowerSMD, 21 Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 420 ns, Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 100A, Supplier Device Package: 24-SMPD, Td (on/off) @ 25°C: 48ns/123ns, Switching Energy: 6.5mJ (on), 2.9mJ (off), Test Condition: 600V, 100A, 1Ohm, 15V, Gate Charge: 270 nC, Part Status: Active, Current - Collector (Ic) (Max): 92 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 440 A, Power - Max: 400 W.
Інші пропозиції MMIX1Y100N120C3H1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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MMIX1Y100N120C3H1 | Виробник : Littelfuse |
 Trans IGBT Chip N-CH 1200V 92A 400000mW 21-Pin SMPD-X |
товару немає в наявності |
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| MMIX1Y100N120C3H1 | Виробник : IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; BiMOSFET™; 1.2kV; 40A; 400W; SMPD Type of transistor: IGBT Technology: BiMOSFET™; GenX3™; XPT™ Collector-emitter voltage: 1.2kV Collector current: 40A Power dissipation: 400W Case: SMPD Gate-emitter voltage: ±20V Pulsed collector current: 440A Mounting: SMD Gate charge: 0.27µC Kind of package: tube Turn-on time: 122ns Turn-off time: 265ns кількість в упаковці: 1 шт |
товару немає в наявності |
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MMIX1Y100N120C3H1 | Виробник : IXYS |
Description: IGBT 1200V 92A 24-SMPD Packaging: Tube Package / Case: 24-PowerSMD, 21 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 420 ns Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 100A Supplier Device Package: 24-SMPD Td (on/off) @ 25°C: 48ns/123ns Switching Energy: 6.5mJ (on), 2.9mJ (off) Test Condition: 600V, 100A, 1Ohm, 15V Gate Charge: 270 nC Part Status: Active Current - Collector (Ic) (Max): 92 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 440 A Power - Max: 400 W |
товару немає в наявності |
|
| MMIX1Y100N120C3H1 | Виробник : IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; BiMOSFET™; 1.2kV; 40A; 400W; SMPD Type of transistor: IGBT Technology: BiMOSFET™; GenX3™; XPT™ Collector-emitter voltage: 1.2kV Collector current: 40A Power dissipation: 400W Case: SMPD Gate-emitter voltage: ±20V Pulsed collector current: 440A Mounting: SMD Gate charge: 0.27µC Kind of package: tube Turn-on time: 122ns Turn-off time: 265ns |
товару немає в наявності |