MMRF1013HR5 NXP USA Inc.
Виробник: NXP USA Inc.
Description: RF MOSFET LDMOS 30V NI1230
Packaging: Tape & Reel (TR)
Package / Case: SOT-979A
Mounting Type: Chassis Mount
Frequency: 2.9GHz
Configuration: Dual
Power - Output: 320W
Gain: 13.3dB
Technology: LDMOS
Supplier Device Package: NI-1230-4H
Part Status: Obsolete
Voltage - Rated: 65 V
Voltage - Test: 30 V
Current - Test: 100 mA
Description: RF MOSFET LDMOS 30V NI1230
Packaging: Tape & Reel (TR)
Package / Case: SOT-979A
Mounting Type: Chassis Mount
Frequency: 2.9GHz
Configuration: Dual
Power - Output: 320W
Gain: 13.3dB
Technology: LDMOS
Supplier Device Package: NI-1230-4H
Part Status: Obsolete
Voltage - Rated: 65 V
Voltage - Test: 30 V
Current - Test: 100 mA
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Технічний опис MMRF1013HR5 NXP USA Inc.
Description: RF MOSFET LDMOS 30V NI1230, Packaging: Tape & Reel (TR), Package / Case: SOT-979A, Mounting Type: Chassis Mount, Frequency: 2.9GHz, Configuration: Dual, Power - Output: 320W, Gain: 13.3dB, Technology: LDMOS, Supplier Device Package: NI-1230-4H, Part Status: Obsolete, Voltage - Rated: 65 V, Voltage - Test: 30 V, Current - Test: 100 mA.
Інші пропозиції MMRF1013HR5
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| MMRF1013HR5 | Виробник : NXP Semiconductors |
 RF MOSFET Transistors Lateral N-Channel Broadband RF Power MOSFET, 2700-2900 MHz, 320 W, 30 V |
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