MMRF1312HSR5 NXP USA Inc.
Виробник: NXP USA Inc.
Description: RF MOSFET LDMOS 50V NI1230
Power - Output: 1000W
Configuration: Dual
Frequency: 1.034GHz
Mounting Type: Chassis Mount
Package / Case: NI-1230-4S
Packaging: Cut Tape (CT)
Current - Test: 100 mA
Voltage - Test: 50 V
Voltage - Rated: 112 V
Part Status: Active
Supplier Device Package: NI-1230-4S
Technology: LDMOS
Gain: 19.6dB
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Технічний опис MMRF1312HSR5 NXP USA Inc.
Description: RF MOSFET LDMOS 50V NI1230, Current - Test: 100 mA, Voltage - Test: 50 V, Voltage - Rated: 112 V, Part Status: Active, Supplier Device Package: NI-1230-4S, Technology: LDMOS, Power - Output: 1000W, Configuration: Dual, Frequency: 1.034GHz, Mounting Type: Chassis Mount, Package / Case: NI-1230-4S, Packaging: Tape & Reel (TR), Gain: 19.6dB.
Інші пропозиції MMRF1312HSR5
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
|
|
MMRF1312HSR5 | NXP USA Inc. |
Description: RF MOSFET LDMOS 50V NI1230 Current - Test: 100 mA Voltage - Test: 50 V Voltage - Rated: 112 V Part Status: Active Supplier Device Package: NI-1230-4S Technology: LDMOS Power - Output: 1000W Configuration: Dual Frequency: 1.034GHz Mounting Type: Chassis Mount Package / Case: NI-1230-4S Packaging: Tape & Reel (TR) Gain: 19.6dB |
товару немає в наявності |
В кошику од. на суму грн. |
 |
MMRF1312HSR5 | NXP Semiconductors |
 RF MOSFET Transistors RF POWER LDMOS TRANSISTOR 900-1215 MHz, 1000 W Peak, 52 V |
товару немає в наявності |
В кошику од. на суму грн. |
| MMRF1312HSR5 |
Виробник: NXP USA Inc.
Description: RF MOSFET LDMOS 50V NI1230
Current - Test: 100 mA
Voltage - Test: 50 V
Voltage - Rated: 112 V
Part Status: Active
Supplier Device Package: NI-1230-4S
Technology: LDMOS
Power - Output: 1000W
Configuration: Dual
Frequency: 1.034GHz
Mounting Type: Chassis Mount
Package / Case: NI-1230-4S
Packaging: Tape & Reel (TR)
Gain: 19.6dB
Description: RF MOSFET LDMOS 50V NI1230
Current - Test: 100 mA
Voltage - Test: 50 V
Voltage - Rated: 112 V
Part Status: Active
Supplier Device Package: NI-1230-4S
Technology: LDMOS
Power - Output: 1000W
Configuration: Dual
Frequency: 1.034GHz
Mounting Type: Chassis Mount
Package / Case: NI-1230-4S
Packaging: Tape & Reel (TR)
Gain: 19.6dB
товару немає в наявності
В кошику
од. на суму грн.
| MMRF1312HSR5 |
|
Виробник: NXP Semiconductors
RF MOSFET Transistors RF POWER LDMOS TRANSISTOR 900-1215 MHz, 1000 W Peak, 52 V
RF MOSFET Transistors RF POWER LDMOS TRANSISTOR 900-1215 MHz, 1000 W Peak, 52 V
товару немає в наявності
В кошику
од. на суму грн.