Технічний опис MMRF1317HR5 NXP Semiconductors
Description: RF MOSFET LDMOS 50V NI1230, Packaging: Tape & Reel (TR), Package / Case: SOT-979A, Mounting Type: Chassis Mount, Frequency: 1.03GHz, Configuration: Dual, Power - Output: 1300W, Gain: 18.2dB, Technology: LDMOS, Supplier Device Package: NI-1230-4H, Voltage - Rated: 105 V, Voltage - Test: 50 V, Current - Test: 100 mA.
Інші пропозиції MMRF1317HR5
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
MMRF1317HR5 | Виробник : NXP USA Inc. |
Description: RF MOSFET LDMOS 50V NI1230 Packaging: Tape & Reel (TR) Package / Case: SOT-979A Mounting Type: Chassis Mount Frequency: 1.03GHz Configuration: Dual Power - Output: 1300W Gain: 18.2dB Technology: LDMOS Supplier Device Package: NI-1230-4H Voltage - Rated: 105 V Voltage - Test: 50 V Current - Test: 100 mA |
товару немає в наявності |
|
|
|
MMRF1317HR5 | Виробник : NXP USA Inc. |
Description: RF MOSFET LDMOS 50V NI1230 Packaging: Cut Tape (CT) Package / Case: SOT-979A Mounting Type: Chassis Mount Frequency: 1.03GHz Configuration: Dual Power - Output: 1300W Gain: 18.2dB Technology: LDMOS Supplier Device Package: NI-1230-4H Voltage - Rated: 105 V Voltage - Test: 50 V Current - Test: 100 mA |
товару немає в наявності |
|
 |
MMRF1317HR5 | Виробник : NXP Semiconductors |
 RF MOSFET Transistors RF POWER LDMOS TRANSISTOR 1030-1090 MHz, 1300 W Peak, 50 V |
товару немає в наявності |