Технічний опис MMRF5014HR5 NXP Semiconductors
Description: RF MOSFET HEMT 50V NI360, Packaging: Tape & Reel (TR), Package / Case: NI-360H-2SB, Mounting Type: Chassis Mount, Frequency: 2.5GHz, Power - Output: 125W, Gain: 18dB, Technology: HEMT, Supplier Device Package: NI-360H-2SB, Voltage - Rated: 125 V, Voltage - Test: 50 V, Current - Test: 350 mA.
Інші пропозиції MMRF5014HR5
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
MMRF5014HR5 | NXP USA Inc. |
 Description: RF MOSFET HEMT 50V NI360Packaging: Tape & Reel (TR) Package / Case: NI-360H-2SB Mounting Type: Chassis Mount Frequency: 2.5GHz Power - Output: 125W Gain: 18dB Technology: HEMT Supplier Device Package: NI-360H-2SB Voltage - Rated: 125 V Voltage - Test: 50 V Current - Test: 350 mA |
товару немає в наявності |
В кошику од. на суму грн. |
| MMRF5014HR5 |
|
Виробник: NXP USA Inc.
Description: RF MOSFET HEMT 50V NI360
Packaging: Tape & Reel (TR)
Package / Case: NI-360H-2SB
Mounting Type: Chassis Mount
Frequency: 2.5GHz
Power - Output: 125W
Gain: 18dB
Technology: HEMT
Supplier Device Package: NI-360H-2SB
Voltage - Rated: 125 V
Voltage - Test: 50 V
Current - Test: 350 mA
Description: RF MOSFET HEMT 50V NI360
Packaging: Tape & Reel (TR)
Package / Case: NI-360H-2SB
Mounting Type: Chassis Mount
Frequency: 2.5GHz
Power - Output: 125W
Gain: 18dB
Technology: HEMT
Supplier Device Package: NI-360H-2SB
Voltage - Rated: 125 V
Voltage - Test: 50 V
Current - Test: 350 mA
товару немає в наявності
В кошику
од. на суму грн.