MOT8205SA6 Guangdong Inmark Electronics Co., Ltd.
Виробник: Guangdong Inmark Electronics Co., Ltd.Description: MOSFET -CH V MA SOT23
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 4.5V
Power Dissipation (Max): 1.14W
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 20 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 25+ | 12.46 грн |
| 42+ | 7.27 грн |
| 100+ | 4.36 грн |
| 500+ | 2.86 грн |
| 1000+ | 2.43 грн |
| 3000+ | 2.07 грн |
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Технічний опис MOT8205SA6 Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET -CH V MA SOT23, Packaging: Tape & Reel (TR), Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A, Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 4.5V, Power Dissipation (Max): 1.14W, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: SOT-23, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 20 V.