Технічний опис MPLAD18KP100CA Microsemi
Category: Bidirectional TVS SMD diodes, Description: Diode: TVS; 18kW; 111V; 112A; bidirectional; Ch: 1; -55÷150°C, Mounting: SMD, Breakdown voltage: 111V, Max. forward impulse current: 112A, Peak pulse power dissipation: 18kW, Operating temperature: -55...150°C, Max. off-state voltage: 0.1kV, Semiconductor structure: bidirectional, Type of diode: TVS, Number of channels: 1.
Інші пропозиції MPLAD18KP100CA
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
| MPLAD18KP100CA | MICROCHIP TECHNOLOGY |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 18kW; 111V; 112A; bidirectional; Ch: 1; -55÷150°C Mounting: SMD Breakdown voltage: 111V Max. forward impulse current: 112A Peak pulse power dissipation: 18kW Operating temperature: -55...150°C Max. off-state voltage: 0.1kV Semiconductor structure: bidirectional Type of diode: TVS Number of channels: 1 |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. |
| MPLAD18KP100CA |
Виробник: MICROCHIP TECHNOLOGY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 18kW; 111V; 112A; bidirectional; Ch: 1; -55÷150°C
Mounting: SMD
Breakdown voltage: 111V
Max. forward impulse current: 112A
Peak pulse power dissipation: 18kW
Operating temperature: -55...150°C
Max. off-state voltage: 0.1kV
Semiconductor structure: bidirectional
Type of diode: TVS
Number of channels: 1
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 18kW; 111V; 112A; bidirectional; Ch: 1; -55÷150°C
Mounting: SMD
Breakdown voltage: 111V
Max. forward impulse current: 112A
Peak pulse power dissipation: 18kW
Operating temperature: -55...150°C
Max. off-state voltage: 0.1kV
Semiconductor structure: bidirectional
Type of diode: TVS
Number of channels: 1
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику
од. на суму грн.