MPLAD30KP33CA/TR Microchip Technology
Виробник: Microchip Technology
Description: TVS DIODE 33VWM 53.3VC PLAD
Packaging: Tape & Reel (TR)
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 564A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 30000W (30kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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Технічний опис MPLAD30KP33CA/TR Microchip Technology
Description: TVS DIODE 33VWM 53.3VC PLAD, Packaging: Tape & Reel (TR), Package / Case: Nonstandard SMD, Mounting Type: Surface Mount, Type: Zener, Operating Temperature: -55°C ~ 150°C (TJ), Applications: General Purpose, Current - Peak Pulse (10/1000µs): 564A, Voltage - Reverse Standoff (Typ): 33V, Supplier Device Package: PLAD, Bidirectional Channels: 1, Voltage - Breakdown (Min): 36.7V, Voltage - Clamping (Max) @ Ipp: 53.3V, Power - Peak Pulse: 30000W (30kW), Power Line Protection: No, Grade: Military, Qualification: MIL-PRF-19500.
Інші пропозиції MPLAD30KP33CA/TR
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
|
|
MPLAD30KP33CA/TR | Microchip Technology |
Description: TVS DIODE 33VWM 53.3VC PLAD Packaging: Cut Tape (CT) Package / Case: Nonstandard SMD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 564A Voltage - Reverse Standoff (Typ): 33V Supplier Device Package: PLAD Bidirectional Channels: 1 Voltage - Breakdown (Min): 36.7V Voltage - Clamping (Max) @ Ipp: 53.3V Power - Peak Pulse: 30000W (30kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
товару немає в наявності |
В кошику од. на суму грн. |
 |
MPLAD30KP33CA/TR | Microsemi |
ESD Suppressors / TVS Diodes |
товару немає в наявності |
В кошику од. на суму грн. |
| MPLAD30KP33CA/TR | MICROCHIP TECHNOLOGY |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 30kW; 36.7V; 564A; bidirectional; Ch: 1; reel,tape Mounting: SMD Peak pulse power dissipation: 30kW Operating temperature: -55...150°C Max. off-state voltage: 33V Kind of package: reel; tape Semiconductor structure: bidirectional Leakage current: 10µA Type of diode: TVS Number of channels: 1 Breakdown voltage: 36.7V Max. forward impulse current: 564A |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. |
| MPLAD30KP33CA/TR |
|
Виробник: Microchip Technology
Description: TVS DIODE 33VWM 53.3VC PLAD
Packaging: Cut Tape (CT)
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 564A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 30000W (30kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 33VWM 53.3VC PLAD
Packaging: Cut Tape (CT)
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 564A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 30000W (30kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
товару немає в наявності
В кошику
од. на суму грн.
| MPLAD30KP33CA/TR |
|
Виробник: Microsemi
ESD Suppressors / TVS Diodes
ESD Suppressors / TVS Diodes
товару немає в наявності
В кошику
од. на суму грн.
| MPLAD30KP33CA/TR |
|
Виробник: MICROCHIP TECHNOLOGY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 30kW; 36.7V; 564A; bidirectional; Ch: 1; reel,tape
Mounting: SMD
Peak pulse power dissipation: 30kW
Operating temperature: -55...150°C
Max. off-state voltage: 33V
Kind of package: reel; tape
Semiconductor structure: bidirectional
Leakage current: 10µA
Type of diode: TVS
Number of channels: 1
Breakdown voltage: 36.7V
Max. forward impulse current: 564A
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 30kW; 36.7V; 564A; bidirectional; Ch: 1; reel,tape
Mounting: SMD
Peak pulse power dissipation: 30kW
Operating temperature: -55...150°C
Max. off-state voltage: 33V
Kind of package: reel; tape
Semiconductor structure: bidirectional
Leakage current: 10µA
Type of diode: TVS
Number of channels: 1
Breakdown voltage: 36.7V
Max. forward impulse current: 564A
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику
од. на суму грн.