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Технічний опис MPQ2907A PBFREE Central Semiconductor
Description: TRANS 4PNP 60V 0.6A, Part Status: Obsolete, Supplier Device Package: TO-116, Frequency - Transition: 200MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 300mA, 10V, Current - Collector Cutoff (Max): 50nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 1.6V @ 30mA, 300mA, Voltage - Collector Emitter Breakdown (Max): 60V, Current - Collector (Ic) (Max): 600mA, Power - Max: 650mW, Operating Temperature: -65°C ~ 150°C (TJ), Transistor Type: 4 PNP (Quad), Mounting Type: Through Hole, Package / Case: 14-DIP (0.300", 7.62mm), Packaging: Tube.
Інші пропозиції MPQ2907A PBFREE
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
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MPQ2907A PBFREE | Central Semiconductor Corp |
Description: TRANS 4PNP 60V 0.6APart Status: Obsolete Supplier Device Package: TO-116 Frequency - Transition: 200MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 300mA, 10V Current - Collector Cutoff (Max): 50nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 30mA, 300mA Voltage - Collector Emitter Breakdown (Max): 60V Current - Collector (Ic) (Max): 600mA Power - Max: 650mW Operating Temperature: -65°C ~ 150°C (TJ) Transistor Type: 4 PNP (Quad) Mounting Type: Through Hole Package / Case: 14-DIP (0.300", 7.62mm) Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. |
| MPQ2907A PBFREE |
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Виробник: Central Semiconductor Corp
Description: TRANS 4PNP 60V 0.6A
Part Status: Obsolete
Supplier Device Package: TO-116
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 300mA, 10V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 30mA, 300mA
Voltage - Collector Emitter Breakdown (Max): 60V
Current - Collector (Ic) (Max): 600mA
Power - Max: 650mW
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: 4 PNP (Quad)
Mounting Type: Through Hole
Package / Case: 14-DIP (0.300", 7.62mm)
Packaging: Tube
Description: TRANS 4PNP 60V 0.6A
Part Status: Obsolete
Supplier Device Package: TO-116
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 300mA, 10V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 30mA, 300mA
Voltage - Collector Emitter Breakdown (Max): 60V
Current - Collector (Ic) (Max): 600mA
Power - Max: 650mW
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: 4 PNP (Quad)
Mounting Type: Through Hole
Package / Case: 14-DIP (0.300", 7.62mm)
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.


