Технічний опис MPS6520 TIN/LEAD Central Semiconductor
Description: 25V 100MA 625MW TH TRANSISTOR-SM, Packaging: Box, Package / Case: TO-226-3, TO-92-3 (TO-226AA), Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 10V, Frequency - Transition: 400MHz, Supplier Device Package: TO-92-3, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 25 V, Power - Max: 625 mW.
Інші пропозиції MPS6520 TIN/LEAD
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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MPS6520 TIN/LEAD | Виробник : Central Semiconductor Corp |
Description: 25V 100MA 625MW TH TRANSISTOR-SM Packaging: Box Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 10V Frequency - Transition: 400MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 25 V Power - Max: 625 mW |
товару немає в наявності |
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MPS6520 TIN/LEAD | Виробник : Central Semiconductor |
 Bipolar Transistors - BJT NPN 40Vcbo 25Vceo 4.0Vebo 100mA 625mW |
товару немає в наявності |