Технічний опис MPSH81
Description: RF TRANS PNP 20V 600MHZ TO-92-3, Transistor Type: PNP, Mounting Type: Through Hole, Package / Case: TO-226-3, TO-92-3 (TO-226AA), Packaging: Bulk, Part Status: Obsolete, Supplier Device Package: TO-92-3, Frequency - Transition: 600MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V, Voltage - Collector Emitter Breakdown (Max): 20V, Current - Collector (Ic) (Max): 50mA, Power - Max: 350mW, Operating Temperature: -55°C ~ 150°C (TJ).
Інші пропозиції MPSH81
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
|
MPSH81 | onsemi |
Description: RF TRANS PNP 20V 600MHZ TO-92-3Transistor Type: PNP Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Packaging: Bulk Part Status: Obsolete Supplier Device Package: TO-92-3 Frequency - Transition: 600MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Voltage - Collector Emitter Breakdown (Max): 20V Current - Collector (Ic) (Max): 50mA Power - Max: 350mW Operating Temperature: -55°C ~ 150°C (TJ) |
товару немає в наявності |
В кошику од. на суму грн. |
|
MPSH81 | Central Semiconductor Corp |
Description: RF TRANS PNP 20V 600MHZ TO-92Part Status: Obsolete Supplier Device Package: TO-92 Frequency - Transition: 600MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Voltage - Collector Emitter Breakdown (Max): 20V Current - Collector (Ic) (Max): 50mA Power - Max: 350mW Operating Temperature: -65°C ~ 150°C (TJ) Transistor Type: PNP Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. |
|
MPSH81 | onsemi / Fairchild |
RF Bipolar Transistors PNP RF Transistor |
товару немає в наявності |
В кошику од. на суму грн. |
| MPSH81 |
![]() |
Виробник: onsemi
Description: RF TRANS PNP 20V 600MHZ TO-92-3
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
Part Status: Obsolete
Supplier Device Package: TO-92-3
Frequency - Transition: 600MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Voltage - Collector Emitter Breakdown (Max): 20V
Current - Collector (Ic) (Max): 50mA
Power - Max: 350mW
Operating Temperature: -55°C ~ 150°C (TJ)
Description: RF TRANS PNP 20V 600MHZ TO-92-3
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
Part Status: Obsolete
Supplier Device Package: TO-92-3
Frequency - Transition: 600MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Voltage - Collector Emitter Breakdown (Max): 20V
Current - Collector (Ic) (Max): 50mA
Power - Max: 350mW
Operating Temperature: -55°C ~ 150°C (TJ)
товару немає в наявності
В кошику
од. на суму грн.
| MPSH81 |
![]() |
Виробник: Central Semiconductor Corp
Description: RF TRANS PNP 20V 600MHZ TO-92
Part Status: Obsolete
Supplier Device Package: TO-92
Frequency - Transition: 600MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Voltage - Collector Emitter Breakdown (Max): 20V
Current - Collector (Ic) (Max): 50mA
Power - Max: 350mW
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
Description: RF TRANS PNP 20V 600MHZ TO-92
Part Status: Obsolete
Supplier Device Package: TO-92
Frequency - Transition: 600MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Voltage - Collector Emitter Breakdown (Max): 20V
Current - Collector (Ic) (Max): 50mA
Power - Max: 350mW
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| MPSH81 |
![]() |
Виробник: onsemi / Fairchild
RF Bipolar Transistors PNP RF Transistor
RF Bipolar Transistors PNP RF Transistor
товару немає в наявності
В кошику
од. на суму грн.





