MQ2N4858UB/TR Microchip Technology
Виробник: Microchip Technology
Description: JFET N-CH 40V UB
Resistance - RDS(On): 60 Ohms
Power - Max: 360 mW
Drain to Source Voltage (Vdss): 40 V
Supplier Device Package: UB
Voltage - Breakdown (V(BR)GSS): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
FET Type: N-Channel
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Packaging: Tape & Reel (TR)
Current - Drain (Idss) @ Vds (Vgs=0): 8 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id: 800 mV @ 500 pA
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Технічний опис MQ2N4858UB/TR Microchip Technology
Description: JFET N-CH 40V UB, Resistance - RDS(On): 60 Ohms, Power - Max: 360 mW, Drain to Source Voltage (Vdss): 40 V, Supplier Device Package: UB, Voltage - Breakdown (V(BR)GSS): 40 V, Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V, FET Type: N-Channel, Operating Temperature: -65°C ~ 200°C (TJ), Mounting Type: Surface Mount, Package / Case: 3-SMD, No Lead, Packaging: Tape & Reel (TR), Current - Drain (Idss) @ Vds (Vgs=0): 8 mA @ 15 V, Voltage - Cutoff (VGS off) @ Id: 800 mV @ 500 pA.
Інші пропозиції MQ2N4858UB/TR
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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MQ2N4858UB/TR | Виробник : Microchip Technology |
 JFETs JFET |
товару немає в наявності |