MQ2N5115UB/TR Microchip Technology
Виробник: Microchip TechnologyDescription: JFET P-CH 30V UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 15V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: UB
Grade: Military
Drain to Source Voltage (Vdss): 30 V
Power - Max: 500 mW
Resistance - RDS(On): 100 Ohms
Voltage - Cutoff (VGS off) @ Id: 3 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 15 mA @ 15 V
Qualification: MIL-PRF-19500
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Технічний опис MQ2N5115UB/TR Microchip Technology
Description: JFET P-CH 30V UB, Packaging: Tape & Reel (TR), Package / Case: 3-SMD, No Lead, Mounting Type: Surface Mount, Operating Temperature: -65°C ~ 200°C (TJ), FET Type: P-Channel, Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 15V, Voltage - Breakdown (V(BR)GSS): 30 V, Supplier Device Package: UB, Grade: Military, Drain to Source Voltage (Vdss): 30 V, Power - Max: 500 mW, Resistance - RDS(On): 100 Ohms, Voltage - Cutoff (VGS off) @ Id: 3 V @ 1 nA, Current - Drain (Idss) @ Vds (Vgs=0): 15 mA @ 15 V, Qualification: MIL-PRF-19500.