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Технічний опис MR850 EIC
Description: DIODE GEN PURP 50V 3A AXIAL, Current - Reverse Leakage @ Vr: 10 µA @ 50 V, Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A, Voltage - DC Reverse (Vr) (Max): 50 V, Operating Temperature - Junction: -65°C ~ 125°C, Supplier Device Package: Axial, Current - Average Rectified (Io): 3A, Technology: Standard, Reverse Recovery Time (trr): 300 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: DO-201AA, DO-27, Axial, Packaging: Bulk.