Продукція > MICROSEMI CORPORATION > MRF581G
MRF581G

MRF581G Microsemi Corporation

11675-mrf581-mrf581a-reva-datasheet
Виробник: Microsemi Corporation
Description: RF TRANS NPN 18V 5GHZ MICRO X
Supplier Device Package: Micro-X ceramic (84C)
Noise Figure (dB Typ @ f): 3dB ~ 3.5dB @ 500MHz
Frequency - Transition: 5GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V
Voltage - Collector Emitter Breakdown (Max): 18V
Current - Collector (Ic) (Max): 200mA
Power - Max: 1.25W
Gain: 13dB ~ 15.5dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: Micro-X ceramic (84C)
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
Відгуки про товар
Написати відгук

Технічний опис MRF581G Microsemi Corporation

Description: RF TRANS NPN 18V 5GHZ MICRO X, Supplier Device Package: Micro-X ceramic (84C), Noise Figure (dB Typ @ f): 3dB ~ 3.5dB @ 500MHz, Frequency - Transition: 5GHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V, Voltage - Collector Emitter Breakdown (Max): 18V, Current - Collector (Ic) (Max): 200mA, Power - Max: 1.25W, Gain: 13dB ~ 15.5dB, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: Micro-X ceramic (84C), Packaging: Bulk.