MRF6S19140HSR3,128 NXP
Виробник: NXP
Description: NXP - MRF6S19140HSR3,128 - MISCELLANEOUS MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
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Технічний опис MRF6S19140HSR3,128 NXP
Description: RF MOSFET, Packaging: Bulk, Package / Case: NI-880S, Current Rating (Amps): 10µA, Mounting Type: Surface Mount, Frequency: 1.93GHz ~ 1.99GHz, Configuration: N-Channel, Power - Output: 29W, Gain: 16dB, Technology: LDMOS, Supplier Device Package: NI-880S, Part Status: Active, Voltage - Rated: 68 V, Voltage - Test: 28 V, Current - Test: 1.7 A.
Інші пропозиції MRF6S19140HSR3,128
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
| MRF6S19140HSR3,128 | NXP USA Inc. |
Description: RF MOSFET Packaging: Bulk Package / Case: NI-880S Current Rating (Amps): 10µA Mounting Type: Surface Mount Frequency: 1.93GHz ~ 1.99GHz Configuration: N-Channel Power - Output: 29W Gain: 16dB Technology: LDMOS Supplier Device Package: NI-880S Part Status: Active Voltage - Rated: 68 V Voltage - Test: 28 V Current - Test: 1.7 A |
товару немає в наявності |
В кошику од. на суму грн. |
| MRF6S19140HSR3,128 |
|
Виробник: NXP USA Inc.
Description: RF MOSFET
Packaging: Bulk
Package / Case: NI-880S
Current Rating (Amps): 10µA
Mounting Type: Surface Mount
Frequency: 1.93GHz ~ 1.99GHz
Configuration: N-Channel
Power - Output: 29W
Gain: 16dB
Technology: LDMOS
Supplier Device Package: NI-880S
Part Status: Active
Voltage - Rated: 68 V
Voltage - Test: 28 V
Current - Test: 1.7 A
Description: RF MOSFET
Packaging: Bulk
Package / Case: NI-880S
Current Rating (Amps): 10µA
Mounting Type: Surface Mount
Frequency: 1.93GHz ~ 1.99GHz
Configuration: N-Channel
Power - Output: 29W
Gain: 16dB
Technology: LDMOS
Supplier Device Package: NI-880S
Part Status: Active
Voltage - Rated: 68 V
Voltage - Test: 28 V
Current - Test: 1.7 A
товару немає в наявності
В кошику
од. на суму грн.