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MRF6S19140HSR3,128 NXP USA Inc.

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Виробник: NXP USA Inc.
Description: RF MOSFET
Current - Test: 1.7 A
Voltage - Test: 28 V
Voltage - Rated: 68 V
Supplier Device Package: NI-880S
Technology: LDMOS
Gain: 16dB
Power - Output: 29W
Configuration: N-Channel
Frequency: 1.93GHz ~ 1.99GHz
Mounting Type: Surface Mount
Current Rating (Amps): 10µA
Package / Case: NI-880S
Part Status: Active
Packaging: Bulk

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Технічний опис MRF6S19140HSR3,128 NXP USA Inc.

Description: RF MOSFET, Current - Test: 1.7 A, Voltage - Test: 28 V, Voltage - Rated: 68 V, Supplier Device Package: NI-880S, Technology: LDMOS, Gain: 16dB, Power - Output: 29W, Configuration: N-Channel, Frequency: 1.93GHz ~ 1.99GHz, Mounting Type: Surface Mount, Current Rating (Amps): 10µA, Package / Case: NI-880S, Part Status: Active, Packaging: Bulk.