MRF6S19140HSR3,128 NXP
Виробник: NXP
Description: NXP - MRF6S19140HSR3,128 - MISCELLANEOUS MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
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Технічний опис MRF6S19140HSR3,128 NXP
Description: RF MOSFET, Current - Test: 1.7 A, Voltage - Test: 28 V, Voltage - Rated: 68 V, Supplier Device Package: NI-880S, Technology: LDMOS, Gain: 16dB, Power - Output: 29W, Configuration: N-Channel, Frequency: 1.93GHz ~ 1.99GHz, Mounting Type: Surface Mount, Current Rating (Amps): 10µA, Package / Case: NI-880S, Part Status: Active, Packaging: Bulk.
Інші пропозиції MRF6S19140HSR3,128
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
| MRF6S19140HSR3,128 | NXP USA Inc. |
Description: RF MOSFET Current - Test: 1.7 A Voltage - Test: 28 V Voltage - Rated: 68 V Supplier Device Package: NI-880S Technology: LDMOS Gain: 16dB Power - Output: 29W Configuration: N-Channel Frequency: 1.93GHz ~ 1.99GHz Mounting Type: Surface Mount Current Rating (Amps): 10µA Package / Case: NI-880S Part Status: Active Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. |
| MRF6S19140HSR3,128 |
|
Виробник: NXP USA Inc.
Description: RF MOSFET
Current - Test: 1.7 A
Voltage - Test: 28 V
Voltage - Rated: 68 V
Supplier Device Package: NI-880S
Technology: LDMOS
Gain: 16dB
Power - Output: 29W
Configuration: N-Channel
Frequency: 1.93GHz ~ 1.99GHz
Mounting Type: Surface Mount
Current Rating (Amps): 10µA
Package / Case: NI-880S
Part Status: Active
Packaging: Bulk
Description: RF MOSFET
Current - Test: 1.7 A
Voltage - Test: 28 V
Voltage - Rated: 68 V
Supplier Device Package: NI-880S
Technology: LDMOS
Gain: 16dB
Power - Output: 29W
Configuration: N-Channel
Frequency: 1.93GHz ~ 1.99GHz
Mounting Type: Surface Mount
Current Rating (Amps): 10µA
Package / Case: NI-880S
Part Status: Active
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.