MRF8S18120HR3 NXP
Виробник: NXP
Description: NXP - MRF8S18120HR3 - MISCELLANEOUS MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
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Технічний опис MRF8S18120HR3 NXP
Description: RF MOSFET LDMOS 28V NI780, Packaging: Tape & Reel (TR), Package / Case: SOT-957A, Mounting Type: Chassis Mount, Frequency: 1.81GHz, Power - Output: 72W, Gain: 18.2dB, Technology: LDMOS, Supplier Device Package: NI-780H-2L, Part Status: Obsolete, Voltage - Rated: 65 V, Voltage - Test: 28 V, Current - Test: 800 mA.
Інші пропозиції MRF8S18120HR3
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
MRF8S18120HR3 | NXP USA Inc. |
Description: RF MOSFET LDMOS 28V NI780 Packaging: Tape & Reel (TR) Package / Case: SOT-957A Mounting Type: Chassis Mount Frequency: 1.81GHz Power - Output: 72W Gain: 18.2dB Technology: LDMOS Supplier Device Package: NI-780H-2L Part Status: Obsolete Voltage - Rated: 65 V Voltage - Test: 28 V Current - Test: 800 mA |
товару немає в наявності |
В кошику од. на суму грн. |
| MRF8S18120HR3 |
|
Виробник: NXP USA Inc.
Description: RF MOSFET LDMOS 28V NI780
Packaging: Tape & Reel (TR)
Package / Case: SOT-957A
Mounting Type: Chassis Mount
Frequency: 1.81GHz
Power - Output: 72W
Gain: 18.2dB
Technology: LDMOS
Supplier Device Package: NI-780H-2L
Part Status: Obsolete
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 800 mA
Description: RF MOSFET LDMOS 28V NI780
Packaging: Tape & Reel (TR)
Package / Case: SOT-957A
Mounting Type: Chassis Mount
Frequency: 1.81GHz
Power - Output: 72W
Gain: 18.2dB
Technology: LDMOS
Supplier Device Package: NI-780H-2L
Part Status: Obsolete
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 800 mA
товару немає в наявності
В кошику
од. на суму грн.