MSC012SMC120B4N MICROCHIP TECHNOLOGY
Виробник: MICROCHIP TECHNOLOGY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 84A; Idm: 350A; 577W
Power dissipation: 577W
Mounting: THT
Kind of package: tube
Case: TO247-4
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Family: SMC
Polarisation: unipolar
Gate charge: 194nC
On-state resistance: 22mΩ
Drain current: 84A
Pulsed drain current: 350A
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Technology: SiC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 84A; Idm: 350A; 577W
Power dissipation: 577W
Mounting: THT
Kind of package: tube
Case: TO247-4
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Family: SMC
Polarisation: unipolar
Gate charge: 194nC
On-state resistance: 22mΩ
Drain current: 84A
Pulsed drain current: 350A
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Technology: SiC
товару немає в наявності
Відгуки про товар
Написати відгук
Технічний опис MSC012SMC120B4N MICROCHIP TECHNOLOGY
Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 84A; Idm: 350A; 577W, Power dissipation: 577W, Mounting: THT, Kind of package: tube, Case: TO247-4, Features of semiconductor devices: Kelvin terminal, Type of transistor: N-MOSFET, Family: SMC, Polarisation: unipolar, Gate charge: 194nC, On-state resistance: 22mΩ, Drain current: 84A, Pulsed drain current: 350A, Drain-source voltage: 1.2kV, Kind of channel: enhancement, Technology: SiC.