Технічний опис MSC012SMC120B4N Microchip Technology
Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 84A; Idm: 350A; 577W, Type of transistor: N-MOSFET, Technology: SiC, Polarisation: unipolar, Drain-source voltage: 1.2kV, Drain current: 84A, Pulsed drain current: 350A, Power dissipation: 577W, Case: TO247-4-notch, On-state resistance: 22mΩ, Mounting: THT, Gate charge: 194nC, Kind of package: tube, Kind of channel: enhancement, Features of semiconductor devices: Kelvin terminal, Family: SMC.
Інші пропозиції MSC012SMC120B4N
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| MSC012SMC120B4N | Виробник : Microchip Technology | MOSFET SIC 1200 V 12 mOhm TO-247-4 Notch |
товару немає в наявності |
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| MSC012SMC120B4N | Виробник : MICROCHIP TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 84A; Idm: 350A; 577W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 84A Pulsed drain current: 350A Power dissipation: 577W Case: TO247-4-notch On-state resistance: 22mΩ Mounting: THT Gate charge: 194nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Family: SMC |
товару немає в наявності |