MSC017SMA120B Microchip Technology
| Кількість | Ціна |
|---|---|
| 1+ | 3562.27 грн |
| 30+ | 3237.49 грн |
| 120+ | 2450.02 грн |
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Технічний опис MSC017SMA120B Microchip Technology
Description: MOSFET SIC 1200V 17 MOHM TO-247, Vgs(th) (Max) @ Id: 2.7V @ 4.5mA (Typ), Power Dissipation (Max): 455W (Tc), Rds On (Max) @ Id, Vgs: 22mOhm @ 40A, 20V, Current - Continuous Drain (Id) @ 25°C: 113A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Bulk, Input Capacitance (Ciss) (Max) @ Vds: 5280 pF @ 1000 V, Gate Charge (Qg) (Max) @ Vgs: 249 nC @ 20 V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): +22V, -10V, Drive Voltage (Max Rds On, Min Rds On): 20V, Part Status: Active, Supplier Device Package: TO-247-3.
Інші пропозиції MSC017SMA120B за ціною від 3210.60 грн до 3616.01 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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MSC017SMA120B | Microchip Technology |
 Description: MOSFET SIC 1200V 17 MOHM TO-247Vgs(th) (Max) @ Id: 2.7V @ 4.5mA (Typ) Power Dissipation (Max): 455W (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 40A, 20V Current - Continuous Drain (Id) @ 25°C: 113A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Bulk Input Capacitance (Ciss) (Max) @ Vds: 5280 pF @ 1000 V Gate Charge (Qg) (Max) @ Vgs: 249 nC @ 20 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): +22V, -10V Drive Voltage (Max Rds On, Min Rds On): 20V Part Status: Active Supplier Device Package: TO-247-3 |
на замовлення 29 шт: термін постачання 21-31 дні (днів) |
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| MSC017SMA120B |
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Виробник: Microchip Technology
Description: MOSFET SIC 1200V 17 MOHM TO-247
Vgs(th) (Max) @ Id: 2.7V @ 4.5mA (Typ)
Power Dissipation (Max): 455W (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 40A, 20V
Current - Continuous Drain (Id) @ 25°C: 113A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 5280 pF @ 1000 V
Gate Charge (Qg) (Max) @ Vgs: 249 nC @ 20 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +22V, -10V
Drive Voltage (Max Rds On, Min Rds On): 20V
Part Status: Active
Supplier Device Package: TO-247-3
Description: MOSFET SIC 1200V 17 MOHM TO-247
Vgs(th) (Max) @ Id: 2.7V @ 4.5mA (Typ)
Power Dissipation (Max): 455W (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 40A, 20V
Current - Continuous Drain (Id) @ 25°C: 113A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 5280 pF @ 1000 V
Gate Charge (Qg) (Max) @ Vgs: 249 nC @ 20 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +22V, -10V
Drive Voltage (Max Rds On, Min Rds On): 20V
Part Status: Active
Supplier Device Package: TO-247-3
на замовлення 29 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 3616.01 грн |
| 25+ | 3210.60 грн |