MSC017SMA120B4 Microchip Technology

Description: MOSFET SIC 1200V 17 MOHM TO-247, Input Capacitance (Ciss) (Max) @ Vds: 5280 pF @ 1000 V, Gate Charge (Qg) (Max) @ Vgs: 249 nC @ 20 V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): +22V, -10V, Drive Voltage (Max Rds On, Min Rds On): 20V, Part Status: Active, Supplier Device Package: TO-247-4, Vgs(th) (Max) @ Id: 2.7V @ 4.5mA (Typ), Power Dissipation (Max): 455W (Tc), Rds On (Max) @ Id, Vgs: 22mOhm @ 40A, 20V, Current - Continuous Drain (Id) @ 25°C: 113A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-4, Packaging: Bulk.