MSC025SMA330B4N Microchip Technology

Description: MOSFET SIC 3300V 25 MOHM TO-247-, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 106A (Tc), Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V, Power Dissipation (Max): 800W (Tc), Vgs(th) (Max) @ Id: 5V @ 7mA, Supplier Device Package: TO-247-4, Drive Voltage (Max Rds On, Min Rds On): 18V, 20V, Vgs (Max): +23V, -10V, Drain to Source Voltage (Vdss): 3300 V, Gate Charge (Qg) (Max) @ Vgs: 410 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 7080 pF @ 2400 V.