MSC025SMA330B4N Microchip Technology
Виробник: Microchip Technology
Description: MOSFET SIC 3300V 25 MOHM TO-247-
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
Power Dissipation (Max): 800W (Tc)
Vgs(th) (Max) @ Id: 5V @ 7mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 3300 V
Gate Charge (Qg) (Max) @ Vgs: 410 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 7080 pF @ 2400 V
Description: MOSFET SIC 3300V 25 MOHM TO-247-
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
Power Dissipation (Max): 800W (Tc)
Vgs(th) (Max) @ Id: 5V @ 7mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 3300 V
Gate Charge (Qg) (Max) @ Vgs: 410 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 7080 pF @ 2400 V
на замовлення 59 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 13274.82 грн |
| 25+ | 11788.12 грн |
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Технічний опис MSC025SMA330B4N Microchip Technology
Description: MOSFET SIC 3300V 25 MOHM TO-247-, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 106A (Tc), Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V, Power Dissipation (Max): 800W (Tc), Vgs(th) (Max) @ Id: 5V @ 7mA, Supplier Device Package: TO-247-4, Drive Voltage (Max Rds On, Min Rds On): 18V, 20V, Vgs (Max): +23V, -10V, Drain to Source Voltage (Vdss): 3300 V, Gate Charge (Qg) (Max) @ Vgs: 410 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 7080 pF @ 2400 V.
Інші пропозиції MSC025SMA330B4N
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
MSC025SMA330B4N | Виробник : Microchip Technology |
 SiC MOSFETs MOSFET SIC 3300V 25 mOhm TO-247-4L-Notch |
товару немає в наявності |
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| MSC025SMA330B4N | Виробник : MICROCHIP TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 3.3kV; 67A; Idm: 240A; 801W Power dissipation: 801W Mounting: THT Kind of package: tube Case: TO247-4-notch Gate charge: 410nC On-state resistance: 31mΩ Drain current: 67A Pulsed drain current: 240A Drain-source voltage: 3.3kV Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Type of transistor: N-MOSFET Technology: SiC Family: SMA Polarisation: unipolar |
товару немає в наявності |