MSC035SMA070B4 Microchip Technology
| Кількість | Ціна |
|---|---|
| 1+ | 724.47 грн |
| 10+ | 697.14 грн |
| 30+ | 554.87 грн |
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Технічний опис MSC035SMA070B4 Microchip Technology
Description: TRANS SJT N-CH 700V 77A TO247-4, Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 700 V, Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 20 V, Drain to Source Voltage (Vdss): 700 V, Vgs (Max): +23V, -10V, Drive Voltage (Max Rds On, Min Rds On): 20V, Part Status: Active, Supplier Device Package: TO-247-4, Vgs(th) (Max) @ Id: 2.7V @ 2mA (Typ), Power Dissipation (Max): 283W (Tc), Rds On (Max) @ Id, Vgs: 44mOhm @ 30A, 20V, Current - Continuous Drain (Id) @ 25°C: 77A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-4, Packaging: Tube.
Інші пропозиції MSC035SMA070B4 за ціною від 864.07 грн до 1118.70 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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MSC035SMA070B4 | Microchip Technology |
 Description: TRANS SJT N-CH 700V 77A TO247-4Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 700 V Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 20 V Drain to Source Voltage (Vdss): 700 V Vgs (Max): +23V, -10V Drive Voltage (Max Rds On, Min Rds On): 20V Part Status: Active Supplier Device Package: TO-247-4 Vgs(th) (Max) @ Id: 2.7V @ 2mA (Typ) Power Dissipation (Max): 283W (Tc) Rds On (Max) @ Id, Vgs: 44mOhm @ 30A, 20V Current - Continuous Drain (Id) @ 25°C: 77A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-4 Packaging: Tube |
на замовлення 133 шт: термін постачання 21-31 дні (днів) |
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| MSC035SMA070B4 |
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Виробник: Microchip Technology
Description: TRANS SJT N-CH 700V 77A TO247-4
Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 700 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 20 V
Drain to Source Voltage (Vdss): 700 V
Vgs (Max): +23V, -10V
Drive Voltage (Max Rds On, Min Rds On): 20V
Part Status: Active
Supplier Device Package: TO-247-4
Vgs(th) (Max) @ Id: 2.7V @ 2mA (Typ)
Power Dissipation (Max): 283W (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 30A, 20V
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
Description: TRANS SJT N-CH 700V 77A TO247-4
Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 700 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 20 V
Drain to Source Voltage (Vdss): 700 V
Vgs (Max): +23V, -10V
Drive Voltage (Max Rds On, Min Rds On): 20V
Part Status: Active
Supplier Device Package: TO-247-4
Vgs(th) (Max) @ Id: 2.7V @ 2mA (Typ)
Power Dissipation (Max): 283W (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 30A, 20V
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
на замовлення 133 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 1118.70 грн |
| 25+ | 993.95 грн |
| 100+ | 864.07 грн |