Технічний опис MSC035SMA170B Microchip Technology
Description: MICROCHIP - MSC035SMA170B - Siliziumkarbid-MOSFET, Eins, n-Kanal, 68 A, 1.7 kV, 0.035 ohm, TO-247, tariffCode: 85412900, Drain-Source-Spannung Vds: 1.7kV, rohsCompliant: YES, Dauer-Drainstrom Id: 68A, hazardous: false, rohsPhthalatesCompliant: YES, isCanonical: Y, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 3.25V, MOSFET-Modul-Konfiguration: Eins, euEccn: NLR, Verlustleistung: 370W, Bauform - Transistor: TO-247, Anzahl der Pins: 3Pin(s), Produktpalette: -, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 20V, Betriebstemperatur, max.: 175°C, Drain-Source-Durchgangswiderstand: 0.035ohm, SVHC: No SVHC (04-Feb-2026).
Інші пропозиції MSC035SMA170B за ціною від 2717.31 грн до 3060.22 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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MSC035SMA170B | MICROCHIP |
 Description: MICROCHIP - MSC035SMA170B - Siliziumkarbid-MOSFET, Eins, n-Kanal, 68 A, 1.7 kV, 0.035 ohm, TO-247tariffCode: 85412900 Drain-Source-Spannung Vds: 1.7kV rohsCompliant: YES Dauer-Drainstrom Id: 68A hazardous: false rohsPhthalatesCompliant: YES isCanonical: Y usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3.25V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 370W Bauform - Transistor: TO-247 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 20V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.035ohm SVHC: No SVHC (04-Feb-2026) |
на замовлення 54 шт: термін постачання 21-31 дні (днів) |
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MSC035SMA170B | Microchip Technology |
Description: MOSFET SIC 1700 V 45 MOHM TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -60°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 68A (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 30A, 20V Power Dissipation (Max): 370W (Tc) Vgs(th) (Max) @ Id: 3.25V @ 2.5mA (Typ) Supplier Device Package: TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +23V, -10V Drain to Source Voltage (Vdss): 1700 V Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 1000 V |
на замовлення 67 шт: термін постачання 21-31 дні (днів) |
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| MSC035SMA170B |
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Виробник: MICROCHIP
Description: MICROCHIP - MSC035SMA170B - Siliziumkarbid-MOSFET, Eins, n-Kanal, 68 A, 1.7 kV, 0.035 ohm, TO-247
tariffCode: 85412900
Drain-Source-Spannung Vds: 1.7kV
rohsCompliant: YES
Dauer-Drainstrom Id: 68A
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3.25V
MOSFET-Modul-Konfiguration: Eins
euEccn: NLR
Verlustleistung: 370W
Bauform - Transistor: TO-247
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 20V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.035ohm
SVHC: No SVHC (04-Feb-2026)
Description: MICROCHIP - MSC035SMA170B - Siliziumkarbid-MOSFET, Eins, n-Kanal, 68 A, 1.7 kV, 0.035 ohm, TO-247
tariffCode: 85412900
Drain-Source-Spannung Vds: 1.7kV
rohsCompliant: YES
Dauer-Drainstrom Id: 68A
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3.25V
MOSFET-Modul-Konfiguration: Eins
euEccn: NLR
Verlustleistung: 370W
Bauform - Transistor: TO-247
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 20V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.035ohm
SVHC: No SVHC (04-Feb-2026)
на замовлення 54 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 2878.19 грн |
| 25+ | 2766.61 грн |
| MSC035SMA170B |
|
Виробник: Microchip Technology
Description: MOSFET SIC 1700 V 45 MOHM TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -60°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 30A, 20V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 3.25V @ 2.5mA (Typ)
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 1000 V
Description: MOSFET SIC 1700 V 45 MOHM TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -60°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 30A, 20V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 3.25V @ 2.5mA (Typ)
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 1000 V
на замовлення 67 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 3060.22 грн |
| 25+ | 2717.31 грн |