MSC035SMA170S Microchip Technology

Description: MOSFET SIC 1700V 35 MOHM TO-268, Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 1000 V, Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 20 V, Drain to Source Voltage (Vdss): 1700 V, Vgs (Max): +23V, -10V, Drive Voltage (Max Rds On, Min Rds On): 20V, Part Status: Active, Supplier Device Package: D3Pak, Vgs(th) (Max) @ Id: 3.25V @ 2.5mA (Typ), Power Dissipation (Max): 278W (Tc), Rds On (Max) @ Id, Vgs: 45mOhm @ 30A, 20V, Current - Continuous Drain (Id) @ 25°C: 59A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Packaging: Bulk.