Технічний опис MSC035SMA170S Microchip Technology
Description: MOSFET SIC 1700V 35 MOHM TO-268, Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 1000 V, Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 20 V, Drain to Source Voltage (Vdss): 1700 V, Vgs (Max): +23V, -10V, Drive Voltage (Max Rds On, Min Rds On): 20V, Part Status: Active, Supplier Device Package: D3Pak, Vgs(th) (Max) @ Id: 3.25V @ 2.5mA (Typ), Power Dissipation (Max): 278W (Tc), Rds On (Max) @ Id, Vgs: 45mOhm @ 30A, 20V, Current - Continuous Drain (Id) @ 25°C: 59A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Packaging: Bulk.
Інші пропозиції MSC035SMA170S за ціною від 2779.79 грн до 3130.63 грн
| Фото | Назва | Виробник | Інформація |
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Ціна |
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MSC035SMA170S | Microchip Technology |
 Description: MOSFET SIC 1700V 35 MOHM TO-268Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 1000 V Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 20 V Drain to Source Voltage (Vdss): 1700 V Vgs (Max): +23V, -10V Drive Voltage (Max Rds On, Min Rds On): 20V Part Status: Active Supplier Device Package: D3Pak Vgs(th) (Max) @ Id: 3.25V @ 2.5mA (Typ) Power Dissipation (Max): 278W (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 30A, 20V Current - Continuous Drain (Id) @ 25°C: 59A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Packaging: Bulk |
на замовлення 30 шт: термін постачання 21-31 дні (днів) |
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| MSC035SMA170S |
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Виробник: Microchip Technology
Description: MOSFET SIC 1700V 35 MOHM TO-268
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 1000 V
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 20 V
Drain to Source Voltage (Vdss): 1700 V
Vgs (Max): +23V, -10V
Drive Voltage (Max Rds On, Min Rds On): 20V
Part Status: Active
Supplier Device Package: D3Pak
Vgs(th) (Max) @ Id: 3.25V @ 2.5mA (Typ)
Power Dissipation (Max): 278W (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 30A, 20V
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Bulk
Description: MOSFET SIC 1700V 35 MOHM TO-268
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 1000 V
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 20 V
Drain to Source Voltage (Vdss): 1700 V
Vgs (Max): +23V, -10V
Drive Voltage (Max Rds On, Min Rds On): 20V
Part Status: Active
Supplier Device Package: D3Pak
Vgs(th) (Max) @ Id: 3.25V @ 2.5mA (Typ)
Power Dissipation (Max): 278W (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 30A, 20V
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Bulk
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 3130.63 грн |
| 25+ | 2779.79 грн |