Технічний опис MSC040SMA120B4 Microchip Technology
Description: MICROCHIP - MSC040SMA120B4 - Siliziumkarbid-MOSFET, Eins, n-Kanal, 66 A, 1.2 kV, 0.04 ohm, TO-247, tariffCode: 85412900, Drain-Source-Spannung Vds: 1.2kV, rohsCompliant: YES, Dauer-Drainstrom Id: 66A, hazardous: false, rohsPhthalatesCompliant: YES, isCanonical: Y, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 2.6V, MOSFET-Modul-Konfiguration: Eins, euEccn: NLR, Verlustleistung: 323W, Bauform - Transistor: TO-247, Anzahl der Pins: 4Pin(s), Produktpalette: -, productTraceability: No, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 20V, Betriebstemperatur, max.: 175°C, Drain-Source-Durchgangswiderstand: 0.04ohm, SVHC: No SVHC (04-Feb-2026).
Інші пропозиції MSC040SMA120B4 за ціною від 1024.77 грн до 1339.00 грн
| Фото | Назва | Виробник | Інформація |
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MSC040SMA120B4 | Microchip Technology |
 Description: SICFET N-CH 1200V 66A TO247-4Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 1000 V Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 20 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): +23V, -10V Drive Voltage (Max Rds On, Min Rds On): 20V Part Status: Active Supplier Device Package: TO-247-4 Vgs(th) (Max) @ Id: 2.6V @ 2mA Power Dissipation (Max): 323W (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V Current - Continuous Drain (Id) @ 25°C: 66A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-4 Packaging: Tube |
на замовлення 136 шт: термін постачання 21-31 дні (днів) |
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MSC040SMA120B4 | MICROCHIP |
Description: MICROCHIP - MSC040SMA120B4 - Siliziumkarbid-MOSFET, Eins, n-Kanal, 66 A, 1.2 kV, 0.04 ohm, TO-247 tariffCode: 85412900 Drain-Source-Spannung Vds: 1.2kV rohsCompliant: YES Dauer-Drainstrom Id: 66A hazardous: false rohsPhthalatesCompliant: YES isCanonical: Y usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.6V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 323W Bauform - Transistor: TO-247 Anzahl der Pins: 4Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 20V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.04ohm SVHC: No SVHC (04-Feb-2026) |
на замовлення 17 шт: термін постачання 21-31 дні (днів) |
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| MSC040SMA120B4 |
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Виробник: Microchip Technology
Description: SICFET N-CH 1200V 66A TO247-4
Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 1000 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 20 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +23V, -10V
Drive Voltage (Max Rds On, Min Rds On): 20V
Part Status: Active
Supplier Device Package: TO-247-4
Vgs(th) (Max) @ Id: 2.6V @ 2mA
Power Dissipation (Max): 323W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
Description: SICFET N-CH 1200V 66A TO247-4
Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 1000 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 20 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +23V, -10V
Drive Voltage (Max Rds On, Min Rds On): 20V
Part Status: Active
Supplier Device Package: TO-247-4
Vgs(th) (Max) @ Id: 2.6V @ 2mA
Power Dissipation (Max): 323W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
на замовлення 136 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 1325.99 грн |
| 25+ | 1177.53 грн |
| 100+ | 1024.77 грн |
| MSC040SMA120B4 |
|
Виробник: MICROCHIP
Description: MICROCHIP - MSC040SMA120B4 - Siliziumkarbid-MOSFET, Eins, n-Kanal, 66 A, 1.2 kV, 0.04 ohm, TO-247
tariffCode: 85412900
Drain-Source-Spannung Vds: 1.2kV
rohsCompliant: YES
Dauer-Drainstrom Id: 66A
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.6V
MOSFET-Modul-Konfiguration: Eins
euEccn: NLR
Verlustleistung: 323W
Bauform - Transistor: TO-247
Anzahl der Pins: 4Pin(s)
Produktpalette: -
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 20V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.04ohm
SVHC: No SVHC (04-Feb-2026)
Description: MICROCHIP - MSC040SMA120B4 - Siliziumkarbid-MOSFET, Eins, n-Kanal, 66 A, 1.2 kV, 0.04 ohm, TO-247
tariffCode: 85412900
Drain-Source-Spannung Vds: 1.2kV
rohsCompliant: YES
Dauer-Drainstrom Id: 66A
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.6V
MOSFET-Modul-Konfiguration: Eins
euEccn: NLR
Verlustleistung: 323W
Bauform - Transistor: TO-247
Anzahl der Pins: 4Pin(s)
Produktpalette: -
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 20V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.04ohm
SVHC: No SVHC (04-Feb-2026)
на замовлення 17 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 1339.00 грн |