MSC040SMA120S Microchip Technology
| Кількість | Ціна |
|---|---|
| 1+ | 1742.08 грн |
| 10+ | 1583.81 грн |
| 30+ | 1304.74 грн |
| 120+ | 1162.53 грн |
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Технічний опис MSC040SMA120S Microchip Technology
Description: SICFET N-CH 1200V 64A TO268, Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 1000 V, Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 20 V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): +23V, -10V, Drive Voltage (Max Rds On, Min Rds On): 20V, Part Status: Active, Supplier Device Package: D3Pak, Vgs(th) (Max) @ Id: 2.6V @ 2mA, Power Dissipation (Max): 303W, Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V, Current - Continuous Drain (Id) @ 25°C: 64A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Packaging: Tube.
Інші пропозиції MSC040SMA120S за ціною від 1874.02 грн до 1874.02 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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MSC040SMA120S | Microchip Technology |
 Description: SICFET N-CH 1200V 64A TO268Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 1000 V Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 20 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): +23V, -10V Drive Voltage (Max Rds On, Min Rds On): 20V Part Status: Active Supplier Device Package: D3Pak Vgs(th) (Max) @ Id: 2.6V @ 2mA Power Dissipation (Max): 303W Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V Current - Continuous Drain (Id) @ 25°C: 64A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Packaging: Tube |
на замовлення 10 шт: термін постачання 21-31 дні (днів) |
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| MSC040SMA120S |
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Виробник: Microchip Technology
Description: SICFET N-CH 1200V 64A TO268
Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 1000 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 20 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +23V, -10V
Drive Voltage (Max Rds On, Min Rds On): 20V
Part Status: Active
Supplier Device Package: D3Pak
Vgs(th) (Max) @ Id: 2.6V @ 2mA
Power Dissipation (Max): 303W
Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Tube
Description: SICFET N-CH 1200V 64A TO268
Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 1000 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 20 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +23V, -10V
Drive Voltage (Max Rds On, Min Rds On): 20V
Part Status: Active
Supplier Device Package: D3Pak
Vgs(th) (Max) @ Id: 2.6V @ 2mA
Power Dissipation (Max): 303W
Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Tube
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 1874.02 грн |