MSC040SMA120SDT/R Microchip Technology

Description: MOSFET SIC 1200 V 40 MOHM TO-263, Packaging: Tape & Reel (TR), Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 68A (Tc), Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V, Power Dissipation (Max): 338W (Tc), Vgs(th) (Max) @ Id: 2.7V @ 2mA, Supplier Device Package: TO-268, Drive Voltage (Max Rds On, Min Rds On): 18V, 20V, Vgs (Max): +23V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 1962 pF @ 1000 V.