MSC060SMA070B Microchip Technology

Description: SICFET N-CH 700V 39A TO247-3, Input Capacitance (Ciss) (Max) @ Vds: 1175 pF @ 700 V, Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V, Drain to Source Voltage (Vdss): 700 V, Vgs (Max): +23V, -10V, Drive Voltage (Max Rds On, Min Rds On): 20V, Part Status: Active, Supplier Device Package: TO-247-3, Vgs(th) (Max) @ Id: 2.4V @ 1mA, Power Dissipation (Max): 143W (Tc), Rds On (Max) @ Id, Vgs: 75mOhm @ 20A, 20V, Current - Continuous Drain (Id) @ 25°C: 39A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.