MSC060SMA070SDT/R MICROCHIP TECHNOLOGY
Виробник: MICROCHIP TECHNOLOGYCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 36A; Idm: 188A; 240W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 36A
Pulsed drain current: 188A
Power dissipation: 240W
Case: TO263-7XL
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
кількість в упаковці: 800 шт
товару немає в наявності
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Технічний опис MSC060SMA070SDT/R MICROCHIP TECHNOLOGY
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 36A; Idm: 188A; 240W, Type of transistor: N-MOSFET, Technology: SiC, Polarisation: unipolar, Drain-source voltage: 700V, Drain current: 36A, Pulsed drain current: 188A, Power dissipation: 240W, Case: TO263-7XL, On-state resistance: 75mΩ, Mounting: SMD, Gate charge: 56nC, Kind of package: reel; tape, Kind of channel: enhancement, Features of semiconductor devices: Kelvin terminal, кількість в упаковці: 800 шт.
Інші пропозиції MSC060SMA070SDT/R
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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MSC060SMA070SDT/R | Виробник : Microchip Technology |
SiC MOSFETs MOSFET SIC 700 V 60 mOhm TO-263-7 XL |
товару немає в наявності |
|
| MSC060SMA070SDT/R | Виробник : MICROCHIP TECHNOLOGY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 36A; Idm: 188A; 240W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 700V Drain current: 36A Pulsed drain current: 188A Power dissipation: 240W Case: TO263-7XL On-state resistance: 75mΩ Mounting: SMD Gate charge: 56nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
товару немає в наявності |