MSC080SMA120JS15 Microchip Technology

Description: MOSFET SIC 1200V 80 MOHM 15A SOT, Input Capacitance (Ciss) (Max) @ Vds: 838 pF @ 1000 V, Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 20 V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): +23V, -10V, Drive Voltage (Max Rds On, Min Rds On): 20V, Part Status: Active, Supplier Device Package: SOT-227 (ISOTOP®), Vgs(th) (Max) @ Id: 2.8V @ 1mA, Power Dissipation (Max): 143W (Tc), Rds On (Max) @ Id, Vgs: 100mOhm @ 15A, 20V, Current - Continuous Drain (Id) @ 25°C: 31A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Chassis Mount, Package / Case: SOT-227-4, miniBLOC, Packaging: Bulk.