MSC080SMA120SDT/R Microchip Technology
Виробник: Microchip TechnologyDescription: MOSFET SIC 1200 V 80 MOHM TO-263
Packaging: Bulk
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 15A, 20V
Power Dissipation (Max): 182W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: TO-268
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 838 pF @ 1000 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 838.35 грн |
| 25+ | 744.70 грн |
| 100+ | 648.06 грн |
Відгуки про товар
Написати відгук
Технічний опис MSC080SMA120SDT/R Microchip Technology
Description: MOSFET SIC 1200 V 80 MOHM TO-263, Packaging: Bulk, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiC (Silicon Carbide Junction Transistor), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 35A (Tc), Rds On (Max) @ Id, Vgs: 100mOhm @ 15A, 20V, Power Dissipation (Max): 182W (Tc), Vgs(th) (Max) @ Id: 2.8V @ 1mA, Supplier Device Package: TO-268, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +23V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 838 pF @ 1000 V.
Інші пропозиції MSC080SMA120SDT/R
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| MSC080SMA120SDT/R | Виробник : MICROCHIP TECHNOLOGY |
MSC080SMA120SDT/R SMD N channel transistors |
товару немає в наявності |