Технічний опис MSC090SDA330B2 Microchip Technology
Description: SIC SBD 3300 V 90 A TO-247 MAX, Part Status: Active, Packaging: Bulk, Current - Average Rectified (Io): 184A, Capacitance @ Vr, F: 6326pF @ 1V, 1MHz, Current - Reverse Leakage @ Vr: 200 µA @ 3300 V, Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 90 A, Voltage - DC Reverse (Vr) (Max): 3300 V, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: TO-247, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-247-2.
Інші пропозиції MSC090SDA330B2 за ціною від 28683.61 грн до 28683.61 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
||
|---|---|---|---|---|---|---|---|
| MSC090SDA330B2 | Microchip Technology |
Description: SIC SBD 3300 V 90 A TO-247 MAX Part Status: Active Packaging: Bulk Current - Average Rectified (Io): 184A Capacitance @ Vr, F: 6326pF @ 1V, 1MHz Current - Reverse Leakage @ Vr: 200 µA @ 3300 V Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 90 A Voltage - DC Reverse (Vr) (Max): 3300 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-247 Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Through Hole Package / Case: TO-247-2 |
на замовлення 26 шт: термін постачання 21-31 дні (днів) |
|
| MSC090SDA330B2 |
Виробник: Microchip Technology
Description: SIC SBD 3300 V 90 A TO-247 MAX
Part Status: Active
Packaging: Bulk
Current - Average Rectified (Io): 184A
Capacitance @ Vr, F: 6326pF @ 1V, 1MHz
Current - Reverse Leakage @ Vr: 200 µA @ 3300 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 90 A
Voltage - DC Reverse (Vr) (Max): 3300 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Description: SIC SBD 3300 V 90 A TO-247 MAX
Part Status: Active
Packaging: Bulk
Current - Average Rectified (Io): 184A
Capacitance @ Vr, F: 6326pF @ 1V, 1MHz
Current - Reverse Leakage @ Vr: 200 µA @ 3300 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 90 A
Voltage - DC Reverse (Vr) (Max): 3300 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
на замовлення 26 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 28683.61 грн |