MSC090SMA070SDT/R Microchip Technology
Виробник: Microchip TechnologyDescription: MOSFET SIC 700 V 90 MOHM TO-263-
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 112mOhm @ 15A, 20V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 5V @ 750µA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 806 pF @ 700 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 800+ | 277.83 грн |
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Технічний опис MSC090SMA070SDT/R Microchip Technology
Description: MOSFET SIC 700 V 90 MOHM TO-263-, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 34A (Tc), Rds On (Max) @ Id, Vgs: 112mOhm @ 15A, 20V, Power Dissipation (Max): 156W (Tc), Vgs(th) (Max) @ Id: 5V @ 750µA, Supplier Device Package: TO-263-7, Drive Voltage (Max Rds On, Min Rds On): 18V, 20V, Vgs (Max): +23V, -10V, Drain to Source Voltage (Vdss): 700 V, Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 806 pF @ 700 V.
Інші пропозиції MSC090SMA070SDT/R за ціною від 267.54 грн до 346.10 грн
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MSC090SMA070SDT/R | Виробник : Microchip Technology |
Description: MOSFET SIC 700 V 90 MOHM TO-263- Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Rds On (Max) @ Id, Vgs: 112mOhm @ 15A, 20V Power Dissipation (Max): 156W (Tc) Vgs(th) (Max) @ Id: 5V @ 750µA Supplier Device Package: TO-263-7 Drive Voltage (Max Rds On, Min Rds On): 18V, 20V Vgs (Max): +23V, -10V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 806 pF @ 700 V |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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| MSC090SMA070SDT/R | Виробник : MICROCHIP TECHNOLOGY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 24A; Idm: 126A; 156W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 700V Drain current: 24A Pulsed drain current: 126A Power dissipation: 156W Case: TO263-7XL On-state resistance: 112mΩ Mounting: SMD Gate charge: 41nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal кількість в упаковці: 800 шт |
товару немає в наявності |
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MSC090SMA070SDT/R | Виробник : Microchip Technology |
SiC MOSFETs MOSFET SIC 700 V 90 mOhm TO-263-7 XL |
товару немає в наявності |
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| MSC090SMA070SDT/R | Виробник : MICROCHIP TECHNOLOGY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 24A; Idm: 126A; 156W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 700V Drain current: 24A Pulsed drain current: 126A Power dissipation: 156W Case: TO263-7XL On-state resistance: 112mΩ Mounting: SMD Gate charge: 41nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
товару немає в наявності |