MSC180SMA120B4N Microchip Technology
Виробник: Microchip TechnologyDescription: MOSFET SIC 1200 V 180 MOHM TO-24
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 225mOhm @ 8A, 20V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 5V @ 500µA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 481 pF @ 1.2 kV
на замовлення 150 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 446.24 грн |
| 25+ | 396.42 грн |
| 100+ | 344.97 грн |
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Технічний опис MSC180SMA120B4N Microchip Technology
Description: MOSFET SIC 1200 V 180 MOHM TO-24, Packaging: Bulk, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 21A (Tc), Rds On (Max) @ Id, Vgs: 225mOhm @ 8A, 20V, Power Dissipation (Max): 147W (Tc), Vgs(th) (Max) @ Id: 5V @ 500µA, Supplier Device Package: TO-247-4, Drive Voltage (Max Rds On, Min Rds On): 18V, 20V, Vgs (Max): +23V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 481 pF @ 1.2 kV.