MSC180SMA120SDT/R Microchip Technology
Виробник: Microchip TechnologyDescription: MOSFET SIC 1200 V 180 MOHM TO-26
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 225mOhm @ 8A, 20V
Power Dissipation (Max): 146W (Tc)
Vgs(th) (Max) @ Id: 5V @ 500µA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 481 pF @ 1.2 kV
на замовлення 773 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 494.57 грн |
| 25+ | 439.54 грн |
| 100+ | 436.23 грн |
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Технічний опис MSC180SMA120SDT/R Microchip Technology
Description: MOSFET SIC 1200 V 180 MOHM TO-26, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 21A (Tc), Rds On (Max) @ Id, Vgs: 225mOhm @ 8A, 20V, Power Dissipation (Max): 146W (Tc), Vgs(th) (Max) @ Id: 5V @ 500µA, Supplier Device Package: TO-263-7, Drive Voltage (Max Rds On, Min Rds On): 18V, 20V, Vgs (Max): +23V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 481 pF @ 1.2 kV.
Інші пропозиції MSC180SMA120SDT/R
| Фото | Назва | Виробник | Інформація |
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MSC180SMA120SDT/R | Виробник : Microchip Technology |
Description: MOSFET SIC 1200 V 180 MOHM TO-26 Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 225mOhm @ 8A, 20V Power Dissipation (Max): 146W (Tc) Vgs(th) (Max) @ Id: 5V @ 500µA Supplier Device Package: TO-263-7 Drive Voltage (Max Rds On, Min Rds On): 18V, 20V Vgs (Max): +23V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 481 pF @ 1.2 kV |
товару немає в наявності |
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MSC180SMA120SDT/R | Виробник : Microchip Technology |
SiC MOSFETs MOSFET SIC 1200 V 180 mOhm TO-263-7 XL |
товару немає в наявності |