MSC360SMA120S Microchip Technology
Виробник: Microchip Technology
Description: MOSFET SIC 1200 V 360 MOHM TO-26
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 5A, 20V
Power Dissipation (Max): 82W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-268
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 258 pF @ 1000 V
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 488.25 грн |
| 25+ | 433.02 грн |
| 100+ | 377.59 грн |
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термін постачання:
21-31 дні (днів)
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Технічний опис MSC360SMA120S Microchip Technology
Description: MOSFET SIC 1200 V 360 MOHM TO-26, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), Rds On (Max) @ Id, Vgs: 450mOhm @ 5A, 20V, Power Dissipation (Max): 82W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-268, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +23V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 258 pF @ 1000 V.
Інші пропозиції MSC360SMA120S за ціною від 437.40 грн до 506.60 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
 |
MSC360SMA120S | MICROCHIP TECHNOLOGY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8A; Idm: 27A; 71W; SMA Power dissipation: 71W Mounting: SMD Case: D3PAK; TO268 Kind of package: tube Gate charge: 21nC Polarisation: unipolar Technology: SiC Drain current: 8A Kind of channel: enhancement Drain-source voltage: 1.2kV Type of transistor: N-MOSFET Family: SMA On-state resistance: 0.45Ω Manufacturer standard package: 30pcs. Pulsed drain current: 27A |
на замовлення 67 шт: термін постачання 14-30 дні (днів) |
|
| MSC360SMA120S |
|
Виробник: MICROCHIP TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8A; Idm: 27A; 71W; SMA
Power dissipation: 71W
Mounting: SMD
Case: D3PAK; TO268
Kind of package: tube
Gate charge: 21nC
Polarisation: unipolar
Technology: SiC
Drain current: 8A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Family: SMA
On-state resistance: 0.45Ω
Manufacturer standard package: 30pcs.
Pulsed drain current: 27A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8A; Idm: 27A; 71W; SMA
Power dissipation: 71W
Mounting: SMD
Case: D3PAK; TO268
Kind of package: tube
Gate charge: 21nC
Polarisation: unipolar
Technology: SiC
Drain current: 8A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Family: SMA
On-state resistance: 0.45Ω
Manufacturer standard package: 30pcs.
Pulsed drain current: 27A
на замовлення 67 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 506.60 грн |
| 3+ | 453.08 грн |
| 10+ | 437.40 грн |