MSC360SMA120SCT/R Microchip Technology
Виробник: Microchip Technology
Description: MOSFET SIC 1200 V 360 MOHM PSMT
Packaging: Tape & Reel (TR)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 5A, 20V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 3.14V @ 250µA
Supplier Device Package: TO-268
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 255 pF @ 1000 V
Description: MOSFET SIC 1200 V 360 MOHM PSMT
Packaging: Tape & Reel (TR)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 5A, 20V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 3.14V @ 250µA
Supplier Device Package: TO-268
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 255 pF @ 1000 V
на замовлення 1300 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1300+ | 288.61 грн |
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Технічний опис MSC360SMA120SCT/R Microchip Technology
Description: MOSFET SIC 1200 V 360 MOHM PSMT, Packaging: Tape & Reel (TR), Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiC (Silicon Carbide Junction Transistor), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), Rds On (Max) @ Id, Vgs: 450mOhm @ 5A, 20V, Power Dissipation (Max): 71W (Tc), Vgs(th) (Max) @ Id: 3.14V @ 250µA, Supplier Device Package: TO-268, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +23V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 255 pF @ 1000 V.
Інші пропозиції MSC360SMA120SCT/R за ціною від 277.92 грн до 359.40 грн
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MSC360SMA120SCT/R | Виробник : Microchip Technology |
Description: MOSFET SIC 1200 V 360 MOHM PSMT Packaging: Cut Tape (CT) Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiC (Silicon Carbide Junction Transistor) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 450mOhm @ 5A, 20V Power Dissipation (Max): 71W (Tc) Vgs(th) (Max) @ Id: 3.14V @ 250µA Supplier Device Package: TO-268 Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +23V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 255 pF @ 1000 V |
на замовлення 1300 шт: термін постачання 21-31 дні (днів) |
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