MSC40SM120JCU2 Microchip Technology

Description: SICFET N-CH 1.2KV 55A SOT227, Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 1000 V, Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 20 V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): +25V, -10V, Drive Voltage (Max Rds On, Min Rds On): 20V, Part Status: Active, Supplier Device Package: SOT-227 (ISOTOP®), Vgs(th) (Max) @ Id: 2.7V @ 1mA, Power Dissipation (Max): 245W (Tc), Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V, Current - Continuous Drain (Id) @ 25°C: 55A (Tc), FET Type: N-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Chassis Mount, Package / Case: SOT-227-4, miniBLOC, Packaging: Tube, Technology: SiCFET (Silicon Carbide).